RESUMEN
Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
RESUMEN
The carrier transport layer with reflection reduction morphology has attracted extensive attention for improving the utilization of light. Herein, we introduced single-layer hollow ZnO hemisphere arrays (ZHAs) behaving light trapping effect as the electron transport layer in perovskite photodetectors (PDs). The single-layer hollow ZHAs can not only reduce the reflection, but also widen the angle of the effective incident light and especially transfer the distribution of the optical field from the ZnO/FTO interface to the perovskite active layer confirmed by the 3D finite-difference time-domain simulation. These merits benefit for the generation, transport and separation of carriers, improving the light utilization efficiency. Finally, our optimized FTO/ZHA/CsPbBr3/carbon structure PDs showed high self-powered performance with a linear dynamic range of 120.3 dB, a detectivity of 4.2 × 1012 Jones, rise/fall time of 13/28 µs and the f-3 dB of up to 28 kHz. Benefiting from the high device performance, the PD was demonstrated to the application in the directional transmission of encrypted files as the signal receiving port with super high accuracy. This work uniquely utilizes the features of high-performance self-powered perovskite PDs in optical communication, paving the path to wide applications of all-inorganic perovskite PDs.
RESUMEN
Compared with a single nanowire (NW) or NW array, the simpler preparation process of an NW network (NWN) enables it to be fabricated in large-scale, flexible, and wearable applications of photodetectors (PDs). However, the NWN behaves many microinterfaces (MIs) between NWs, seriously limiting the device performance and stability. Here, we demonstrate a welding strategy for an MAPbI3 NWN, which enhances the crystallinity of the NWN and enhances the radial transmission of photogenerated carriers, leading to a better device performance with ultrahigh stability. Our NWN PDs fabricated by using the welding strategy showed ultrahigh performance with an on/off ratio and detectivity of 2.8 × 104 and 4.16 × 1012 Jones, respectively, which are the best performance for reported metal-semiconductor-metal (MSM) perovskite NWN PDs and are comparable to those of single-NW or NW array PDs. More importantly, our unpackaged NWN PDs show ultrahigh storage stability in air with a humidity of 55-65%, and the flexible NWN PDs can enable 250 bending cycles at different bending radii and 1000 bending cycles at fixed bending radii with no performance degradation being observed. These results indicate our welding strategy is very powerful for improving the performance of the NW device with applications in the wearable field.
RESUMEN
Organic-inorganic hybrid lead halide perovskites have attracted much attention in the photoelectric field due to their excellent characteristics, such as a tunable band gap, simple fabrication process, and high photoelectric conversion efficiency. However, the commercialization of the perovskite-based devices still faces many challenges, one of which is the inclusion of the toxic lead. Herein, we demonstrated a two-step solution method for synthesizing tin-based perovskite nanowires (NWs) with their application in photodetectors (PDs). By changing the halide exchange time and the Sn content in the precursor, the dark current of the CsPbxSn1-x(BryI1-y)3 perovskite NW PDs increased with increasing content of tin and decreased with increasing Br concentration, and the lowest dark current with a value of 0.672 nA at 1 V was achieved for the perovskite alloy NW PDs synthesized with 0.5 mg mL-1 SnI2. Our optimized perovskite alloy NW PDs showed high performance with a linear dynamic range of up to 120 dB, a rising/falling time of 4.25/4.82 ms, and a detectivity of 2 × 1010 Jones. In addition, our Sn-based perovskite NW devices could maintain good performance after storing in air for 30 days. These results demonstrated good practical application for the Sn-based perovskite NW devices.
